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JMnic
Product Specification
Silicon PNP Power Transistors
2SB1105
DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -3 30 150 -55~150 ae ae UNIT V V V A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE= IE=-50mA, IC=0 IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA IC=-1.5A ,IB=-3mA IC=-3A ,IB=-30mA VCB=-120V, IE=0 VCE=-100V, RBE= IC=-1.5A ; VCE=-3V ID=-3A 1000 MIN -120 -7
2SB1105
SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD
TYP.
MAX
UNIT V V
-1.5 -3.0 -2.0 -3.5 -100 -10 |I |I
V V V V A A
3.0
V
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1105
Fig.2 Outline dimensions
3

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